GTO snubber capacitor a cikin kayan lantarki na lantarki
Bayanan fasaha
| Yanayin zafin aiki | Matsakaicin zafin aiki.,Mafi, max: + 85 ℃ Nau'in zafin jiki na sama: +85 ℃ Zazzabi na ƙasa: -40℃ |
| kewayon capacitance | 0.22 ~ 3μF |
| Ƙarfin wutar lantarki | 3000V.DC～10000V.DC |
| Cap.tol | ± 5% (J); ± 10% (K) |
| Juriya irin ƙarfin lantarki | 1.35Un DC/10S |
| Halin ɓarna | tgδ≤0.001 f=1KHz |
| Juriya na rufi | C≤0.33μF RS≥15000 MΩ (a 20℃ 100V.DC 60S) C：0.33μF RS*C≥5000S (a 20℃ 100V.DC 60S) |
| Jure yajin aiki na yanzu | duba takardar bayanai |
| Tsawon rayuwa | 100000h (Un; Θhotspot≤70°C) |
| Ma'aunin tunani | IEC 61071; |
Siffar
1. Mylar tef, Rufe tare da guduro;
2. Gudun kwaya na jan karfe;
3. Juriya ga babban ƙarfin lantarki, ƙananan tgδ, ƙananan zafin jiki;
4. ƙananan ESL da ESR;
5. Babban bugun jini na yanzu.
Aikace-aikace
1. GTO Snubber.
2. An yi amfani da shi sosai a cikin kayan lantarki na wutar lantarki lokacin da mafi girman ƙarfin lantarki, mafi girman kariya ta halin yanzu.
Na al'ada kewaye
Zane mai fa'ida
Ƙayyadaddun bayanai
| Un=3000V.DC | |||||||
| Capacitance (μF) | φD (mm) | L (mm) | L1(mm) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms (A) |
| 0.22 | 35 | 44 | 52 | 25 | 1100 | 242 | 30 |
| 0.33 | 43 | 44 | 52 | 25 | 1000 | 330 | 35 |
| 0.47 | 51 | 44 | 52 | 22 | 850 | 399 | 45 |
| 0.68 | 61 | 44 | 52 | 22 | 800 | 544 | 55 |
| 1 | 74 | 44 | 52 | 20 | 700 | 700 | 65 |
| 1.2 | 80 | 44 | 52 | 20 | 650 | 780 | 75 |
| 1.5 | 52 | 70 | 84 | 30 | 600 | 900 | 45 |
| 2.0 | 60 | 70 | 84 | 30 | 500 | 1000 | 55 |
| 3.0 | 73 | 70 | 84 | 30 | 400 | 1200 | 65 |
| 4.0 | 83 | 70 | 84 | 30 | 350 | 1400 | 70 |
| Un=6000V.DC | |||||||
| Capacitance (μF) | φD (mm) | L (mm) | L1(mm) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms (A) |
| 0.22 | 43 | 60 | 72 | 25 | 1500 | 330 | 35 |
| 0.33 | 52 | 60 | 72 | 25 | 1200 | 396 | 45 |
| 0.47 | 62 | 60 | 72 | 25 | 1000 | 470 | 50 |
| 0.68 | 74 | 60 | 72 | 22 | 900 | 612 | 60 |
| 1 | 90 | 60 | 72 | 22 | 800 | 900 | 75 |
| Un=7000V.DC | |||||||
| Capacitance (μF) | φD (mm) | L (mm) | L1(mm) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms (A) |
| 0.22 | 45 | 57 | 72 | 25 | 1100 | 242 | 30 |
| 0.68 | 36 | 80 | 92 | 28 | 1000 | 680 | 25 |
| 1.0 | 43 | 80 | 92 | 28 | 850 | 850 | 30 |
| 1.5 | 52 | 80 | 92 | 25 | 800 | 1200 | 35 |
| 1.8 | 57 | 80 | 92 | 25 | 700 | 1260 | 40 |
| 2.0 | 60 | 80 | 92 | 23 | 650 | 1300 | 45 |
| 3.0 | 73 | 80 | 92 | 22 | 500 | 1500 | 50 |
| Un=8000V.DC | |||||||
| Capacitance (μF) | φD (mm) | L (mm) | L1(mm) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms (A) |
| 0.33 | 35 | 90 | 102 | 30 | 1100 | 363 | 25 |
| 0.47 | 41 | 90 | 102 | 28 | 1000 | 470 | 30 |
| 0.68 | 49 | 90 | 102 | 28 | 850 | 578 | 35 |
| 1 | 60 | 90 | 102 | 25 | 800 | 800 | 40 |
| 1.5 | 72 | 90 | 102 | 25 | 700 | 1050 | 45 |
| 2.0 | 83 | 90 | 102 | 25 | 650 | 1300 | 50 |
| Un=10000V.DC | |||||||
| Capacitance (μF) | φD (mm) | L (mm) | L1(mm) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms (A) |
| 0.33 | 45 | 114 | 123 | 35 | 1500 | 495 | 30 |
| 0.47 | 54 | 114 | 123 | 35 | 1300 | 611 | 35 |
| 0.68 | 65 | 114 | 123 | 35 | 1200 | 816 | 40 |
| 1 | 78 | 114 | 123 | 30 | 1000 | 1000 | 55 |
| 1.5 | 95 | 114 | 123 | 30 | 800 | 1200 | 70 |
